| PART |
Description |
Maker |
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 15GN01MA |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 15GN01CA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| 2SJ114 |
HIGH SPEED POWER SWITCHING, HIGH FREQUENCY POWER AMPLIFIER
|
Hitachi Semiconductor
|
| 2014VS-66NMEB 1212VS-66NMED 2014VS-66NMED 1212VS-6 |
High Frequency, High Current Power Inductors
|
Coilcraft lnc.
|
| HCP0805-1R0-R HCP0805-1R5-R HCP0805-2R2-R HCP0805- |
1 ELEMENT, 1 uH, POWDERED IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
High Current, High Frequency, Power Inductors
|
COOPER INDUSTRIES
Cooper Bussmann, Inc.
|
| 94SA156X0020CBP 94SA227X0010FBP 94SA686X0020EBP 94 |
High Capacitance, Miniaturized and Well Suited for High-Frequency Switching Power Supplies
Solid Aluminum Capacitors With Organic Semiconductor Electrolyte
|
VISAY[Vishay Siliconix]
|
| KTC2803 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY HIGH FREQUENCY POWER AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| HG-1012JA HG-2012JA |
(HG-1012JA / HG-2012JA) High Stability High Frequency Oscillator
HIGH-STABILITY HIGH-FREQUENCY OSCILLATOR 高稳定高频振荡器
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| FD1500BV-90DA |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
